the AOT25S65 & aob25s65 & aotf25s65 have been AOT25S65/aob25s65/aotf25s65 v ds @ t j,max 750v i dm 104a r ds(on),max 0.19 w q g,typ 26.4nc e oss @ 400v 5.8 m c symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction temperatur e. 65 -- maximum case-to-sink a maximum junction-to-ambient a,d 65 65 c/w derate above 25 o c parameter AOT25S65/aob25s65 0.4 aotf25s65 units v/ns maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j 300 drain-source voltage c/w w/ o c c thermal characteristics 0.5 -- c/w maximum junction-to-case 0.35 a c fabricated using the advanced a mos tm high voltage process that is designed to deliver high levels of performance and robustness in switching applications. by providing low r ds(on) , q g and e oss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supp ly designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOT25S65/aob25s65 aotf25s65 gate-source voltage v a t c =100c pulsed drain current c continuous drain current t c =25c i d 25* 25 avalanche current c 16* 16 junction and storage temperature range t c =25c dv/dt 2.9 power dissipation b repetitive avalanche energy c 50 357 mj mj single pulsed avalanche energy g w p d aotf25s65l 650 30 100 104 25* 16* 3.1 40 0.3 7 96 750 2.5 20 -55 to 150 aotf25s65l g d s www.freescale.net.cn 1/7 600v 20a a aa a mos tm power transistor general description features
symbol min typ max units 650 - - 700 750 - - - 1 - 10 - i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.6 3.3 4 v - 0.165 0.19 w - 0.47 0.53 w v sd - 0.84 - v i s maximum body-diode continuous current - - 25 a i sm - - 104 a c iss - 1278 - pf c oss - 87 - pf c o(er) - 64.5 - pf c o(tr) - 236.7 - pf c rss - 1.4 - pf r g - 4.9 - w q g - 26.4 - nc q gs - 6.2 - nc q gd - 9.5 - nc t d(on) - 29 - ns t r - 30 - ns t d(off) - 112 - ns t f - 34 - ns t rr - 408 - ns i rm - 33 - a q rr - 8.27 - m c v gs =0v, v ds =100v, f=1mhz gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c effective output capacitance, energy related h v gs =0v, v ds =0 to 480v, f=1mhz switching parameters i dss effective output capacitance, time related i r ds(on) static drain-source on-resistance i s =12.5a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitance i f =12.5a,di/dt=100a/ m s,v ds =400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =12.5a, r g =25 w turn-off fall time total gate charge v gs =10v, v ds =480v, i d =12.5a gate source charge gate drain charge v gs =10v, i d =12.5a, t j =25c v ds =520v, t j =150c zero gate voltage drain current body diode reverse recovery charge i f =12.5a,di/dt=100a/ m s,v ds =400v maximum body-diode pulsed current turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime body diode reverse recovery time peak reverse recovery current i f =12.5a,di/dt=100a/ m s,v ds =400v v v gs =10v, i d =12.5a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v v ds =650v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is use d. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. l=60mh, i as =5a, v dd =150v, starting t j =25c h. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. i. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. j. wavesoldering only allowed at leads. www.freescale.net.cn 2/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 10 20 30 40 50 0 5 10 15 20 v ds (volts) figure 1: on-region characteristics@25c i d (a) v gs =4.5v 6v 10v 7v 0.01 0.1 1 10 100 1000 2 4 6 8 10 v gs (volts) figure 3: transfer characteristics i d (a) -55c v ds =20v 25c 125c 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 50 60 i d (a) figure 4: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 5: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =12.5a 0.7 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 6: break down vs. junction temperature bv dss (normalized) 0 5 10 15 20 25 30 35 0 5 10 15 20 v ds (volts) figure 2: on-region characteristics@125c i d (a) v gs =4.5v 5v 10v 6v 5v 5.5v 5.5v 7v www.freescale.net.cn 3/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 q g (nc) figure 8: gate-charge characteristics v gs (volts) v ds =480v i d =12.5a 1 10 100 1000 10000 0 100 200 300 400 500 600 v ds (volts) figure 9: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 11: maximum forward biased safe operating area for aot(b)25s65 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 12: maximum forward biased safe operating area for aotf25s65(note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 7: body-diode characteristics (note e) i s (a) 25c 125c 0 2 4 6 8 10 12 0 100 200 300 400 500 600 v ds (volts) figure 10: coss stored energy eoss(uj) e oss www.freescale.net.cn 4/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t case (c) figure 15: current de-rating (note b) current rating i d (a) 0 150 300 450 600 750 900 25 50 75 100 125 150 175 t case (c) figure 14: avalanche energy e as (mj) 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 13: maximum forward biased safe operating area for aotf25s65l(note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 1s www.freescale.net.cn 5/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 16: normalized maximum transient thermal imp edance for aot(b)25s65 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.35c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 17: normalized maximum transient thermal imp edance for aotf25s65 (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 18: normalized maximum transient thermal imp edance for aotf25s65l (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.1c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d t on t p d t on t p d www.freescale.net.cn 6/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 7/7 AOT25S65/aob25s65/aotf25s65 600v 20a a aa a mos tm power transistor
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